aod4102/AOI4102 30v n-channel mosfet v ds i d (at v gs =10v) 19a r ds(on) (at v gs =10v) < 37m w r ds(on) (at v gs = 4.5v) < 64m w symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jc maximum junction-to-case c/w c/w maximum junction-to-ambient a d 4.5 60 7 power dissipation b p d w power dissipation a p dsm w t a =70c 21 2.7 t a =25c a t a =25c i dsm a t a =70c i d 19 13 t c =25c t c =100c avalanche energy l=0.3mh c mj avalanche current c 6.5 continuous drain current 12 8 a 9 the aod4102/AOI4102 uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. this device is suitable for use in pwm, load switching and general purpose applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v v 20 gate-source voltage drain-source voltage 30 units maximum junction-to-ambient a c/w r q ja 20 50 30 junction and storage temperature range -55 to 175 c thermal characteristics 30 pulsed drain current c continuous drain current g parameter typ max t c =25c 4.2 10 t c =100c g d s www.freescale.net.cn 1/6 general description features
symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 10 m a v gs(th) gate threshold voltage 1 1.8 3 v i d(on) 30 a 30 37 t j =125c 46 55 53 64 m w 30.5 37.5 m w 53.5 64.5 m w g fs 12 s v sd 0.77 1 v i s 12 a c iss 288 360 432 pf c oss 31 45 59 pf c rss 18 30 42 pf r g 0.5 1 1.5 w q g (10v) 5.3 6.6 8 nc q g (4.5v) 2.5 3.2 4 nc q gs 1.2 1.5 1.8 nc q gd 1.3 2.2 3.1 nc t d(on) 4.3 ns t r 10 ns t d(off) 12.8 ns t f 3.2 ns t rr 11 14 17 ns q rr 4.5 6 7.2 nc body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =12a reverse transfer capacitance i f =12a, di/dt=100a/ m s v gs =0v, v ds =15v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a v ds =v gs i d =250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m w t0252 i s =1a,v gs =0v v ds =5v, i d =10a v gs =4.5v, i d =7a to251a v gs =4.5v, i d =7a to252 v gs =10v, i d =12a to251a v gs =10v, v ds =15v, r l =1.2 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =15v, i d =12a gate source charge gate drain charge total gate charge body diode reverse recovery charge i f =12a, di/dt=100a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 15 0c. the value in any given application depends on the user's specific board design, and the maximum tempe rature of 175c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =175c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175c. the soa curve provides a single pulse ratin g. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. www.freescale.net.cn 2/6 aod4102/AOI4102 30v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0 5 10 15 20 25 30 2 3 4 5 6 7 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 0 10 20 30 40 50 60 70 80 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w w w w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =4.5v i d =7a v gs =10v i d =12a 0 30 60 90 120 4 5 6 7 8 9 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w w w w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =12a 25c 125c 0 5 10 15 20 25 30 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics (note e) i d (a) 3.5v 4v 6v 7v 10 4.5v 5v v gs =3v -40c -40c www.freescale.net.cn 3/6 aod4102/AOI4102 30v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0 2 4 6 8 10 0 1 2 3 4 5 6 7 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 100 200 300 400 500 600 0 5 10 15 20 25 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 20 40 60 80 100 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal imped ance (note f) z q q q q jc normalized transient thermal resistance c oss c rss v ds =15v i d =12a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t c =25c 10 m s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 1ms dc r ds(on) limited t j(max) =175c t c =25c 100 m s r q jc =7c/w www.freescale.net.cn 4/6 aod4102/AOI4102 30v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal imped ance (note h) z q q q q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 5 10 15 20 25 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 5 10 15 20 25 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note f) current rating i d (a) 1 10 100 1000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c r q ja =60c/w 0 5 10 15 20 25 30 35 1.00e-07 1.00e-06 1.00e-05 1.00e-04 1.00e-03 time in avalanche, t a (s) figure 12: single pulse avalanche capability (note c) i ar (a) peak avalanche current t a =25c t a =150c www.freescale.net.cn 5/6 aod4102/AOI4102 30v n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & w aveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & w aveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & w aveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr www.freescale.net.cn 6/6 aod4102/AOI4102 30v n-channel mosfet
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